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Proceedings Paper

Breakdown in HgCdTe Metal Insulator Semiconductor (MIS) detectors
Author(s): Yoshihiro Miyamoto; Hiroshi Sakai; Kunihiro Tanikawa
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Paper Abstract

Semiconductor breakdown in a HgCdTe MIS detector was investigated. The measured breakdown usualy has a surface potential vs. gate-voltage characteristic peak. Calculations based on an ideal MIS model and tunnel theory have failed to explain the observed breakdown characteristics. This paper proposes a breakdown model which considers the influence of dislocations. The dislocations are modeled as excess donor-like impurities captured around each dislocation core. The model explains the peak and predicts the peak height, including its dependence on carrier concentration and dislocation density.

Paper Details

Date Published: 23 February 1985
PDF: 8 pages
Proc. SPIE 0572, Infrared Technology XI, (23 February 1985); doi: 10.1117/12.950681
Show Author Affiliations
Yoshihiro Miyamoto, Fujitsu Laboratories Ltd. (Japan)
Hiroshi Sakai, Fujitsu Laboratories Ltd. (Japan)
Kunihiro Tanikawa, Fujitsu Laboratories Ltd. (Japan)

Published in SPIE Proceedings Vol. 0572:
Infrared Technology XI
Richard A. Mollicone; Irving J. Spiro, Editor(s)

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