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Proceedings Paper

Solid-Phase Laser Doping Of Silicon
Author(s): A. M. Prokhorov; S. G. Kiyak; A. A. Manenkov; C. N. Mikhailova; A. S. Seferov; V. Craciun
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Paper Abstract

The up-to-date technology of semiconductor devices employs a number of doping procedures for semiconductor materials including epitaxy from the gaseous and liquid phases, diffusion, variation of the crystal growth conditions by a particular program1. These pro-cedures are time-consuming and complicated, since they involve a series of accurate and laborious processes. Besides, the doped layers thus obtained feature a large thickness ,and p-n junctions - a large depth.

Paper Details

Date Published: 18 May 1989
PDF: 4 pages
Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); doi: 10.1117/12.950631
Show Author Affiliations
A. M. Prokhorov, Institute of General Physics (USSR)
S. G. Kiyak, Institute of General Physics (USSR)
A. A. Manenkov, Institute of General Physics (USSR)
C. N. Mikhailova, Institute of General Physics (USSR)
A. S. Seferov, Institute of General Physics (USSR)
V. Craciun, Central Institute of Physics (Romania)


Published in SPIE Proceedings Vol. 1033:
Trends in Quantum Electronics
Ioan Ursu, Editor(s)

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