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Proceedings Paper

Quantum Confined Stark Effect In Asymmetric Double Quantum Wells
Author(s): Yehiam Prior; J. E. Golub; P. F. Liao; D. J. Eilenberger; J. P. Harbison; L. T. Florez
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Paper Abstract

The effects of an external electric field on the luminescence and absorbtion properties of asymmetric coupled quantum wells (ACQW) structures consisting of two quantum wells of different width and depth are investigated. Experimental results are presented for two GaAs/AlGaAs coupled well systems, demonstrating the large shift and the sharp turnoff of the wavefunction overlap. We have observed the transition from type I (spatially direct) to type II (spatially indirect) in GaAs/AlGaAs ACQW. The transition is manifested as a strong electric field-induced quenching of the photoluminescence which correlates well with the results of a single particle calculation of the electron-hole overlap. By properly designing the coupled well structure, photoluminescence quenching (90% - 10%) is observed for a change in bias field of only 5 kV/cm. Owing to the large level repulsion, a Stark shift of 5 meV is observed when the bias field is switched by only 18 kV/cm.

Paper Details

Date Published: 18 May 1989
PDF: 5 pages
Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); doi: 10.1117/12.950623
Show Author Affiliations
Yehiam Prior, Weizmann Institute of Science (Israel)
J. E. Golub, Bellcore (United States)
P. F. Liao, Bellcore (United States)
D. J. Eilenberger, Bellcore (United States)
J. P. Harbison, Bellcore (United States)
L. T. Florez, Bellcore (United States)


Published in SPIE Proceedings Vol. 1033:
Trends in Quantum Electronics
Ioan Ursu, Editor(s)

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