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Proceedings Paper

Resonant Raman Study Of ZnSe Epitaxial Layers Grown On GaAs Substrates
Author(s): M . I. Djibladze; I. I. Dorosh; A. A. Zlenko; G. N. Kekelidze; P. P. Pashinin; K. A. Prokhorov
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Paper Abstract

Quantitative difference between Raman and resonant Raman scattering spectra of thin ZnSe layers on GaAs substrates is presented. The dynamics of changing of Raman scattering properties while shortenning the exciting light wavelength for ZnSe/GaAs heterojunction is given. The difference in polarization spectra is demonstrated.

Paper Details

Date Published: 18 May 1989
PDF: 4 pages
Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); doi: 10.1117/12.950622
Show Author Affiliations
M . I. Djibladze, Tbilisi State University (USSR)
I. I. Dorosh, Tbilisi State University (USSR)
A. A. Zlenko, Tbilisi State University (USSR)
G. N. Kekelidze, Tbilisi State University (USSR)
P. P. Pashinin, Tbilisi State University (USSR)
K. A. Prokhorov, Tbilisi State University (USSR)


Published in SPIE Proceedings Vol. 1033:
Trends in Quantum Electronics
Ioan Ursu, Editor(s)

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