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Proceedings Paper

Topography Of GaAs/AlgaAs Heterostructures Using The Lateral Photo Effect
Author(s): P. F. Fontein; P. Hendriks; J. Wolter; A. Kucernak; R. Peat; D. E. Williams
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Paper Abstract

We studied the lateral photo effect in CaAs/A1xGa1-xAs heterostructures both theoretically and experimentally. We observe a linear dependence of the photo voltage as a function of the position of the light spot. In our model this corresponds to a recombination length of the spatially separated electrons and holes longer than the length of the sample (1 mm). Deviations of this linear dependence are a direct indication of inhomogeneities in the conductive properties of the two-dimensional electron gas at the interface of the heterostructure. Results are shown in which long (1 mm) but very narrow cracks are seen.

Paper Details

Date Published: 9 February 1989
PDF: 5 pages
Proc. SPIE 1028, Scanning Imaging, (9 February 1989); doi: 10.1117/12.950344
Show Author Affiliations
P. F. Fontein, Eindhoven University of Technology (Netherlands)
P. Hendriks, Eindhoven University of Technology (Netherlands)
J. Wolter, Eindhoven University of Technology (Netherlands)
A. Kucernak, U.K. Atomic Energy Authority (United Kingdom)
R. Peat, U.K. Atomic Energy Authority (United Kingdom)
D. E. Williams, U.K. Atomic Energy Authority (United Kingdom)


Published in SPIE Proceedings Vol. 1028:
Scanning Imaging
Tony Wilson, Editor(s)

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