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Proceedings Paper

Structural And Compositional Characterization Of Semiconductor Multilayers By Modulation Spectroscopies.
Author(s): Chris Van Hoof; Douglas J. Arent; Jo De Boeck; Kristin Deneffe; Gustaaf Borghs
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Paper Abstract

Materials characterization of semiconductor structures suited for nonlinear optical applications has been performed by absorption and photomodulated absorption spectroscopy. With respect to non-modulated absorption spectroscopy, a strong increase in room temperature resolution is observed. We present here the first photomodulated absorption studies performed on AlxGa1-xAs/GaAs and InxGa1-xAs/GaAs superlattices and AlAs/GaAs tunnel diodes, revealing excellent resolution of excitonic transitions. The temperature dependence of the spectral lineshapes arising from bulk InGaAs and AlGaAs samples is studied in the temperature range from 100K to 300K, and is compared to lineshapes arising from excitonic transitions in superlattices. Application of this technique to InxGa1-xAs/GaAs structures grown on GaAs substrates, which due to their favorable band structure do not require sample thinning, is most attractive.

Paper Details

Date Published: 5 April 1989
PDF: 4 pages
Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); doi: 10.1117/12.950203
Show Author Affiliations
Chris Van Hoof, Interuniversity Micro-Electronics Center (Belgium)
Douglas J. Arent, Interuniversity Micro-Electronics Center (Belgium)
Jo De Boeck, Interuniversity Micro-Electronics Center (Belgium)
Kristin Deneffe, Interuniversity Micro-Electronics Center (Belgium)
Gustaaf Borghs, Interuniversity Micro-Electronics Center (Belgium)


Published in SPIE Proceedings Vol. 1025:
Semiconductor Lasers
Gerard A. Acket, Editor(s)

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