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Proceedings Paper

Phase-Locked Index-Guided Semiconductor Laser Arrays
Author(s): Ronald R. Drenten; Jan Opschoor; Carel J. van der Poel; Cornelis J. Reinhoudt; Adriaan Valster; Gerard A. Acket
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Paper Abstract

The performance of parallel and Y-junction arrays has been studied experimentally; calculations of modes in Y-junctions, based on a new model are presented. A flat nearfield distribution from a parallel-stripe array has been achieved by spatially chirping the inter stripe distances. A 2/1 Y-junction array in ',ISIS structure has been realised, which lases in a stable in-phase mode up to the mirror damage level. In contrast, we show a 2/3 Y-junction ridge-guide array, with an InGaP active, layer (λ =660 nm.), which does not start in an in-phase mode.

Paper Details

Date Published: 5 April 1989
PDF: 5 pages
Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); doi: 10.1117/12.950198
Show Author Affiliations
Ronald R. Drenten, Philips Research Laboratories (Netherlands)
Jan Opschoor, Philips Research Laboratories (Netherlands)
Carel J. van der Poel, Philips Research Laboratories (Netherlands)
Cornelis J. Reinhoudt, Philips Research Laboratories (Netherlands)
Adriaan Valster, Philips Research Laboratories (Netherlands)
Gerard A. Acket, Philips Research Laboratories (Netherlands)


Published in SPIE Proceedings Vol. 1025:
Semiconductor Lasers
Gerard A. Acket, Editor(s)

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