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Proceedings Paper

Excimer Laser-Assisted Etching Of Solids For Microelectronics
Author(s): J.-L. Peyre; C. Vannier; D. Riviere; G. Villela
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Paper Abstract

A variety of gas-solid interactions have been studied using a compact home-made excimer laser. Indium phosphide was irradiated with photons of 193 nm in CF3Br atmosphere at ambient temperature. Surface aspect and etching selectivity with SiO2 seem to be very good. First evaluations of electrical damages on etched surfaces are promising. Silicon etching was investigated in presence of chlorine gas with 308 nm or 248 nm radiations. Influence of material doping on etching conditions was noticed and etch rates depend on gas pressure and gas flow. Other experiments on aluminum films have been performed with the same gas and laser wavelengths.

Paper Details

Date Published: 10 April 1989
PDF: 8 pages
Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); doi: 10.1117/12.950117
Show Author Affiliations
J.-L. Peyre, Laboratoires de Marcoussis (France)
C. Vannier, Laboratoires de Marcoussis (France)
D. Riviere, Laboratoires de Marcoussis (France)
G. Villela, Laboratoires de Marcoussis (France)


Published in SPIE Proceedings Vol. 1022:
Laser Assisted Processing
Lucien Diego Laude; Gerhard K. Rauscher, Editor(s)

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