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Proceedings Paper

Pulsed Laser Synthesis Of Titanium Silicides And Nitrides
Author(s): E. D'Anna; G. Leggieri; A. Luches; M. Martino; S. Luby; Ion N. Mihailescu
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Paper Abstract

Titanium films (120 nm) deposited on single-crystalline silicon (c-Si) and on poly-Si/Si02/c-Si substrates were subjected to Nd:glass laser irradiation in air. Ti/Si samples were also submitted to excimer laser irradiation in a nitrogen jet. From RBS analysis it follows that in the first case titanium silicide is formed on c-Si substrate after one pulse of 1.5 J/cm2 energy density. On the poly-Si substrate a lower fluence (1 J/cm2) was sufficient. The samples submitted to excimer laser irradiation in a nitrogen jet show silicide synthesis at the Ti/Si interface and titanium nitride synthesis at the metal surface. The nitride was shown to work well as an interdiffusion barrier.

Paper Details

Date Published: 10 April 1989
PDF: 6 pages
Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); doi: 10.1117/12.950114
Show Author Affiliations
E. D'Anna, Universita' di Lecce (Italy)
G. Leggieri, Universita' di Lecce (Italy)
A. Luches, Universita' di Lecce (Italy)
M. Martino, Universita' di Lecce (Italy)
S. Luby, Slovak Academy of Science (Czechoslovakia)
Ion N. Mihailescu, Romanian Academy of Science (Romania)

Published in SPIE Proceedings Vol. 1022:
Laser Assisted Processing
Lucien Diego Laude; Gerhard K. Rauscher, Editor(s)

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