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Proceedings Paper

Pulsed Laser Synthesis And Printing Of Compound Semiconductors
Author(s): Tamas Szorenyi; Zsolt Toth
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Paper Abstract

A systematic study on ruby laser processing of supported Ge/Se bilayer structures is reported. Depending on the sequence of the initial layers and processing parameters compound synthesis, total or partial ablation of one of the constituents or the compound formed and simultaneous transfer of the ablated material onto a separate substrate in close proximity is possible with one single laser pulse. The results establish a novel single step technique for local deposition of compound films with lateral dimensions down to the micrometer range from a multilayer structure on a transparent support as a source.

Paper Details

Date Published: 10 April 1989
PDF: 4 pages
Proc. SPIE 1022, Laser Assisted Processing, (10 April 1989); doi: 10.1117/12.950107
Show Author Affiliations
Tamas Szorenyi, Research Group on Laser Physics of the Hungarian Academy of Sciences (Hungary)
Zsolt Toth, Research Group on Laser Physics of the Hungarian Academy of Sciences (Hungary)

Published in SPIE Proceedings Vol. 1022:
Laser Assisted Processing
Lucien Diego Laude; Gerhard K. Rauscher, Editor(s)

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