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Proceedings Paper

Photonic Applications Of Thin Film Gaas Grown On Silicon And Insulating Substrates By Molecular Beam Epitaxy
Author(s): Jeffrey D. Morse; Glen M. McWright; Raymond P. Mariella; Charles F. McConaghey; Elaine M. Behymer; William H. Guthreau
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Paper Abstract

Thin film GaAs layers grown by Molecular Beam Epitaxy (MBE) on silicon, semi-insulating GaAs, and insulating substrates have been investigated for application to optoelectronic circuit technology. Photoconductivity measurements were conducted to characterize the electronic transport properties of the epitaxial layers in terms of carrier recombination lifetime and effective drift mobility. By varying the epitaxial growth parameters, it is possible to obtain various levels of material quality which are suitable for various components of optoelectronic integrated circuits. Results from photodetectors fabricated from GaAs grown on various layers will be presented. The fabrication of ridge waveguides from GaAs grown on silicon dioxide will also be described. Finally, a procedure for growing high quality GaAs for active devices in situ with layers for picosecond photoconductors will be discussed.

Paper Details

Date Published: 27 February 1989
PDF: 6 pages
Proc. SPIE 1019, Thin Film Technologies III, (27 February 1989); doi: 10.1117/12.950038
Show Author Affiliations
Jeffrey D. Morse, Lawrence Livermore National Laboratory (United States)
Glen M. McWright, Lawrence Livermore National Laboratory (United States)
Raymond P. Mariella, Lawrence Livermore National Laboratory (United States)
Charles F. McConaghey, Lawrence Livermore National Laboratory (United States)
Elaine M. Behymer, Lawrence Livermore National Laboratory (United States)
William H. Guthreau, Lawrence Livermore National Laboratory (United States)


Published in SPIE Proceedings Vol. 1019:
Thin Film Technologies III
Karl H. Guenther; Hans K. Pulker, Editor(s)

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