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Proceedings Paper

Investigation Of Semiconductor Carrier Dynamics By Time-Resolved Reflectivity, Transmittance And Photoconductivity In The Picosecond Range
Author(s): Harald Bergner; Volkmar Bruckner; Manfred Supianek; Mathias Lenzner
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Paper Abstract

Using 25 ps pulses of Nd:YAG laser with tunable wavelength we studied relaxation processes, diffusion and fieldstrength dependent carrier mobility in semiconductors by different ps techniques. The sensitivity in reflectivity and transmittance experiments was improved by optimization of polarization, angle of incidence and wavelength of a probe beam. Using different carrier distributions we were able to distinguish between nonlinear and linear bulk and surface recombination and ambipolar diffusion, for example in crystalline silicon. At ps excitation the photoconductivity was measured using a correlation technique. The first optoelectronic switch of the correlator was a high mobility semi conductor to achieve extremely short electrical pulses (down to 6 ps) a part of the gap was covered by a light-tight layer. We measured the linear and nonlinear recombination rates in amorphous silicon, SOS, GaAs, GaSe etc. Furthermore, we have estimated the mobility-recombination time product for various semiconductors. Furthermore, we measured the dependence of carrier mobility on the applied field strength in GaAs.

Paper Details

Date Published: 8 March 1989
PDF: 8 pages
Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); doi: 10.1117/12.949987
Show Author Affiliations
Harald Bergner, Friedrich-Schiller University Jena (Germany)
Volkmar Bruckner, Friedrich-Schiller University Jena (Germany)
Manfred Supianek, Friedrich-Schiller University Jena (Germany)
Mathias Lenzner, Friedrich-Schiller University Jena (Germany)


Published in SPIE Proceedings Vol. 1017:
Nonlinear Optical Materials
Gerald Roosen, Editor(s)

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