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Proceedings Paper

Dynamic Band Filling In GaAs/AlAs Multiple Quantum Wells For Efficient Reflection Modulation
Author(s): Wolfgang Kowalsky; Thomas Hackbarth; Karl J. Ebeling
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Paper Abstract

We demonstrate all-optical intensity modulation in GaAs/AlAs multiple quantum well (MQW) devices with integrated dielectric reflector grown by molecular beam epitaxy. A 4 mW control beam at λc = 790 nm wavelength produces a reflection change of 1:3 by dynamic band filling in a twenty-period GaAs MQW structure of well width dOW = 20 nm for a test beam at λt = 866 nm which is close to the lowest energy transition ifl the quantum wells ( λ= 868 nm). The integration of a multilayered dielectric reflector of 92% reflectivity consisting of 20 pairs of A10.08Ga0.92 As/AlAs quarterwave layers allows for operation in reflection and thus removal of tWe opaque GaAs substrate is not required. Dynamics are shown to be limited by excess carrier lifetimes of τ = 4 ns corresponding to a 3 dB frequency of 70 MHz. Surface recombination in microresonator structures may be used to improve the dynamics. For a theoretical analysis the carrier-induced absorption change by dynamic band filling of the quantized energy states in the conduction and valence bands of the quantum wells is considered.

Paper Details

Date Published: 8 March 1989
PDF: 6 pages
Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); doi: 10.1117/12.949957
Show Author Affiliations
Wolfgang Kowalsky, Technical University of Braunschweig (Federal Republic of Germany)
Thomas Hackbarth, Technical University of Braunschweig (Federal Republic of Germany)
Karl J. Ebeling, Technical University of Braunschweig (Federal Republic of Germany)


Published in SPIE Proceedings Vol. 1017:
Nonlinear Optical Materials
Gerald Roosen, Editor(s)

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