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Proceedings Paper

Photo-Electronic Optical Nonlinearities In Three- And Quasi Two-Dimensional Semiconductors
Author(s): C. Klingshirn; Ch. Weber; H.E. Swoboda; R. Renner; F. A. Majumder; M. Kunz; M. Rinker; H. Schwab; M. Wegener; D. S. Chemla
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Paper Abstract

We report here on photo-electronic nonlinearities in direct gap seminconductors, especially those connected with the transition from a low-density gas of excitons to an electron-hole plasma. We consider both three-dimensional and quasi two-dimensional semiconductors and compare both systms. Finally we show that these photo-electronic optical non-linearities can be used to obtain various types of optical bistability.

Paper Details

Date Published: 8 March 1989
PDF: 9 pages
Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); doi: 10.1117/12.949952
Show Author Affiliations
C. Klingshirn, Fachbereich Physik der Universitat (Germany)
Ch. Weber, Fachbereich Physik der Universitat (Germany)
H.E. Swoboda, Fachbereich Physik der Universitat (Germany)
R. Renner, Fachbereich Physik der Universitat (Germany)
F. A. Majumder, Fachbereich Physik der Universitat (Germany)
M. Kunz, Fachbereich Physik der Universitat (Germany)
M. Rinker, Fachbereich Physik der Universitat (Germany)
H. Schwab, Fachbereich Physik der Universitat (Germany)
M. Wegener, Fachbereich Physik der Universitat (Germany)
D. S. Chemla, AT + T Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 1017:
Nonlinear Optical Materials
Gerald Roosen, Editor(s)

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