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Proceedings Paper

On Plasma-Film Interactions In rf Sputtered a-Si:H and a-Ge:H
Author(s): J. Shinar; S. Mitra; H.-S. Wu
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Paper Abstract

The extension of a previous investigation of plasma-film interactions in a-Si:H rf sputtered in He/H2, Ar/H2, and Xe/H2, at a target-to-substrate gap d = 1", to include higher gaps and rf sputtered a-Ge:H, is described and discussed. As expected, the interactions are weakened at d≥2", and the resulting films appear to be more relaxed than at d = 1". The analysis of the IR stretch and bending mode bands in annealed films sheds new light on relaxation processes and the relation between the stretch mode structure and the optoelectronic quality of a-Si:H films. In a-Ge:H, the deposition rate increases with increasing rf power in a manner similar to that in a-Si:H, and decreases exponentially with increasing d. The dihydride and trihydride bonding configuration densities decrease and the photoconductivity increases with increasing rf power (as in a-Si:H) and increasing d. These phenomena are discussed in relation to the dependence of the plasma-film interactions on these parameters.

Paper Details

Date Published: 6 March 1989
PDF: 7 pages
Proc. SPIE 1016, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VII, (6 March 1989); doi: 10.1117/12.949920
Show Author Affiliations
J. Shinar, Iowa State University (United States)
S. Mitra, Iowa State University (United States)
H.-S. Wu, Iowa State University (United States)

Published in SPIE Proceedings Vol. 1016:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VII
Claes-Goeran Granqvist; Carl M. Lampert, Editor(s)

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