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Proceedings Paper

Amorphous Silicon FET Addressed Liquid Crystal Spatial Light Modulator
Author(s): J. E. Bigelow; D. E. Castleberry; W. W. Piper; G. E. Possin
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Paper Abstract

Advances in the technology of fabrication of large arrays of thin-film field-effect transistors for liquid crystal display applications is making available an important new component for many other applications such as spatial light modulators for optical signal processors. Hydrogenated amorphous silicon has a number of advantages over other semiconductors for such arrays relating primarily to cost and yield due to the simple, low temperature processing, and options offered by a transmissive device. There are also disadvantages stemming from the low electron mobility which is roughly 0.1% that of crystalline silicon. Still, sub-micro-second switching times are possible which is not only adequate for liquid crystal control within very large arrays but suitable for much of the row and column driving circuitry as well. In this paper we will describe the characteristics of a-Si devices, circuits, and LC cells controlled by them. We will also discuss the technology in the context of projecting what the capabilities of such devices could be for spatial light modulators and displays.

Paper Details

Date Published: 4 March 1986
PDF: 5 pages
Proc. SPIE 0567, Advances in Materials for Active Optics, (4 March 1986); doi: 10.1117/12.949837
Show Author Affiliations
J. E. Bigelow, General Electric Co. (United States)
D. E. Castleberry, General Electric Co. (United States)
W. W. Piper, General Electric Co. (United States)
G. E. Possin, General Electric Co. (United States)


Published in SPIE Proceedings Vol. 0567:
Advances in Materials for Active Optics
Solomon Musikant, Editor(s)

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