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Proceedings Paper

Recent Developments in the Growth of Chalcopyrite Crystals for Nonlinear Infrared Applications
Author(s): R. S. Feigelson; R. K. Route
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Paper Abstract

Improvements in crystal growth technology have enabled us to grow 28 mm dia., 10 cm long crack- and twin-free boules of the chalcopyrite compounds AgGaS2 and AgGaSe2. While the crystals grow with optical defects (micron-size scattering centers), post-growth heat treatment procedures have been used to successfully eliminate them and produce material of near-theoretical transparency. High optical quality, oriented single crystals, 1 cm in cross-section and over 2 cm in length have been produced and are leading to new advances in IR frequency generation. The optical and phase equilibrium studies that have led to this advance in materials technology are described, as well as some of the details in the crystal growth technology itself.

Paper Details

Date Published: 4 March 1986
PDF: 9 pages
Proc. SPIE 0567, Advances in Materials for Active Optics, (4 March 1986); doi: 10.1117/12.949823
Show Author Affiliations
R. S. Feigelson, Stanford University (United States)
R. K. Route, Stanford University (United States)


Published in SPIE Proceedings Vol. 0567:
Advances in Materials for Active Optics
Solomon Musikant, Editor(s)

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