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Proceedings Paper

Correlation Of Submicron Linewidths Derived From Electrical And Electron-Optical Methods.
Author(s): Michael T. Reilly
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Paper Abstract

An electrical probe technique is used to measure the widths of doped polysilicon structures. The measured values are compared to those obtained with a low-voltage SEM. This is done for widths in the micron to submicron range. A correlation is performed and various accuracies reported.

Paper Details

Date Published: 2 January 1986
PDF: 8 pages
Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); doi: 10.1117/12.949745
Show Author Affiliations
Michael T. Reilly, Sperry Corporation (United States)


Published in SPIE Proceedings Vol. 0565:
Micron and Submicron Integrated Circuit Metrology
Kevin M. Monahan, Editor(s)

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