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Proceedings Paper

Electrical Measurements of Sidewall Spacer Dimensions
Author(s): T. W. Bril; J. M. De Blasi; L. Gutai; M. Chu
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Paper Abstract

A whole wafer measurement method was developed to measure submicron oxide spacer dimensions. The technique offers the capability to evaluate the glass deposition and etchback processes used to form the spacers. Lateral diffusion of implanted layers can also be measured with this method. Measured spacer-width values agree well with measurements from SEM micrographs. Results show that the precision of this technique is presently limited by electrical probing accuracy and reticle fabrication.

Paper Details

Date Published: 2 January 1986
PDF: 4 pages
Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); doi: 10.1117/12.949741
Show Author Affiliations
T. W. Bril, Signetics Corporation (United States)
J. M. De Blasi, Signetics Corporation (United States)
L. Gutai, Signetics Corporation (United States)
M. Chu, Signetics Corporation (United States)


Published in SPIE Proceedings Vol. 0565:
Micron and Submicron Integrated Circuit Metrology
Kevin M. Monahan, Editor(s)

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