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Proceedings Paper

Surface Topography Studies Of Nanocrystalline Si by STM
Author(s): D. W. Pohl; J. K. Gimzewski; A. Humbert; S. Vepek
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Paper Abstract

Scanning tunneling microscopy (STM) is optimally suited to study surface topography and roughness at the nanometer scale where optical and other methods fail. The topography of nanocrystalline silicon is chosen as an example to demonstrate the outstanding potential of the new technique.

Paper Details

Date Published: 2 January 1986
PDF: 4 pages
Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); doi: 10.1117/12.949738
Show Author Affiliations
D. W. Pohl, IBM Zurich Research Laboratory (Switzerland)
J. K. Gimzewski, IBM Zurich Research Laboratory (Switzerland)
A. Humbert, IBM Zurich Research Laboratory (Switzerland)
S. Vepek, University of Zurich (Switzerland)

Published in SPIE Proceedings Vol. 0565:
Micron and Submicron Integrated Circuit Metrology
Kevin M. Monahan, Editor(s)

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