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Proceedings Paper

Domain Inversion Effects in Ti - LiNbO3 Integrated Optical Devices
Author(s): S. Thaniyavarn; T. Findakly; D. Booher; J. Moen
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Paper Abstract

Optical domain inversion effects on the performance of electro-optic devices in Ti-indiffused C-cut LiNbO3 are studied. The C- surface was found to be considerably more immune to domain inversion than the C+ surface under similar diffusion conditions. The extent of domain inversion was found to depend on the diffusion temperature, time, initial Ti film thickness and waveguide width. Lower electro-optically induced phase mod lation was observed in the drive voltage in Mach-Zehnder interferometers fabricated on C-1- substrates compared to that of C- substrates under the same voltage drive. The increase in crosstalk levels and change in the switching behavior of directional couplers attributable to domain inversion are also discussed.

Paper Details

Date Published: 19 November 1985
PDF: 5 pages
Proc. SPIE 0559, Fiber Optics: Short-Haul and Long-Haul Measurements and Applications III, (19 November 1985); doi: 10.1117/12.949596
Show Author Affiliations
S. Thaniyavarn, TRW Electro-Optics Research Center (United States)
T. Findakly, TRW Electro-Optics Research Center (United States)
D. Booher, TRW Electro-Optics Research Center (United States)
J. Moen, TRW Electro-Optics Research Center (United States)


Published in SPIE Proceedings Vol. 0559:
Fiber Optics: Short-Haul and Long-Haul Measurements and Applications III
Robert L. Galawa, Editor(s)

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