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Proceedings Paper

Lattice Strain Measurements In Silicon Micropositioning Elements By X-Ray Topography
Author(s): D. Windisch; P. Becker
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Paper Abstract

X-ray diffraction methods were developed for the investigation of strain fields in mechanical components of monocrystalline silicon. This local strain fields arise from external forces and from surface defects. Two simple examples of strained silicon are shown in this paper. The average value of the surface region destroyed by slicing with a diamond wheel was 50 μm and by mechanical grinding about 80 μm thick. This destroyed surface region must be removed by an etching procedure, for getting strain free mechanical components.

Paper Details

Date Published: 11 April 1989
PDF: 6 pages
Proc. SPIE 1015, Micromachining Optical Components and Precision Engineering, (11 April 1989); doi: 10.1117/12.949451
Show Author Affiliations
D. Windisch, Physikalisch-Technische Bundesanstalt (Federal Republic of Germany)
P. Becker, Physikalisch-Technische Bundesanstalt (Federal Republic of Germany)


Published in SPIE Proceedings Vol. 1015:
Micromachining Optical Components and Precision Engineering
Peter Langenbeck, Editor(s)

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