Share Email Print
cover

Proceedings Paper

In-Situ Study Of Silicon Vapour Phase Epitaxy Using Laser Light Scattering
Author(s): D. J. Robbins; A. J. Pidduck; C. Pickering; I. M. Young; J. L. Glasper
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The use of the smooth surface approximation to analyse light scattering from the surface of silicon wafers during epitaxial growth is described. Expressions for the time-dependent power spectral density function for isotropic and anisotropic surface textures are derived and compared with the experimental data for various stages of the epitaxial process. Additional quantitative information on epitaxial surface topography is provided by in-situ ellipsometry measurements, and by angle-resolved light scattering from wafers after removal from the growth reactor.

Paper Details

Date Published: 10 March 1989
PDF: 10 pages
Proc. SPIE 1012, In-Process Optical Measurements, (10 March 1989); doi: 10.1117/12.949324
Show Author Affiliations
D. J. Robbins, Royal Signals and Radar Establishment (United Kingdom)
A. J. Pidduck, Royal Signals and Radar Establishment (United Kingdom)
C. Pickering, Royal Signals and Radar Establishment (United Kingdom)
I. M. Young, Royal Signals and Radar Establishment (United Kingdom)
J. L. Glasper, Royal Signals and Radar Establishment (United Kingdom)


Published in SPIE Proceedings Vol. 1012:
In-Process Optical Measurements
Kenneth H. Spring, Editor(s)

© SPIE. Terms of Use
Back to Top