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Proceedings Paper

Control Of Reactive Deposition Processes By In-Situ Ellipsometry
Author(s): H. Schwiecker; K. H. Hammann; U. Schneider
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Paper Abstract

Ellipsometric measurement methods allow the characterization of interfaces or thin films between two media during deposition processes. The non-perturbing character combined with a remarkable sensitivity makes this optical technique suitable for in-situ measurements. The study of the complex refractive index as a function of the film thickness allows the control of inhomogeneous layers of dielectric and metallic materials. The present paper discusses the in-situ control of DC-sputtered silicon oxide, silicon nitride and titanium oxide films as well as electron-beam-gun evaporated films consisting of a mixture of different materials. The possibility of the production of preselected inhomogeneous layers by using oxide-nitride films will be demonstrated. The influences of different gas-control techniques on the optical properties will be shown.

Paper Details

Date Published: 10 March 1989
PDF: 9 pages
Proc. SPIE 1012, In-Process Optical Measurements, (10 March 1989); doi: 10.1117/12.949323
Show Author Affiliations
H. Schwiecker, Technische Fachhochschule Berlin (Germany)
K. H. Hammann, Technische Fachhochschule Berlin (Germany)
U. Schneider, Technische Fachhochschule Berlin (Germany)

Published in SPIE Proceedings Vol. 1012:
In-Process Optical Measurements
Kenneth H. Spring, Editor(s)

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