Share Email Print

Proceedings Paper

High-speed Lateral Photodetectors On Semi-Insulating InGaAs and InP
Author(s): V. Diadiuk; S. H. Groves
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A new type of high-performance, planar PIN photodetector operating in the 1.0-1.6 μm wavelength region has been fabricated on semi-insulating InP and InGaAs entirely by formation of alloyed contacts. Their planar geometry and simple fabrication process, that does not require a separate step to form the junction, together with their high speed under reverse bias (FWHM . 50 ps) and sensitivity (n ≈ 40% at λ = 1.24μm, without anti-reflection coating) make these devices attractive for integration with FETs and for photodetector arrays.

Paper Details

Date Published: 28 October 1985
PDF: 5 pages
Proc. SPIE 0545, Optical Technology for Microwave Applications II, (28 October 1985); doi: 10.1117/12.948336
Show Author Affiliations
V. Diadiuk, Massachusetts Institute of Technology (United States)
S. H. Groves, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0545:
Optical Technology for Microwave Applications II
Shi-Kay Yao, Editor(s)

© SPIE. Terms of Use
Back to Top