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Proceedings Paper

Indium Doped Silicon Detector Arrays For Space Application
Author(s): K. Ho fmann; P. Nothaft
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Paper Abstract

Indium doped silicon (Si:In) material has been used to fabricate the detector elements for an infrared (IR) radiometer array. The array will be employed in experiments on a spaceborne platform, where a low radiation background (fiDg < 109 cm-2sec-1) and a low operating temperature (T < 20 K) is provided. The performance of the Si:In detectors has been characterized prior to the assembly of the array. Test results will be presented for the spectral responsivity, the linearity, the frequency behaviour, the noise equivalent power values and the cross talk.

Paper Details

Date Published: 7 December 1988
PDF: 12 pages
Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); doi: 10.1117/12.948312
Show Author Affiliations
K. Ho fmann, AEG Design Center (Germany)
P. Nothaft, AEG Design Center (Germany)

Published in SPIE Proceedings Vol. 0972:
Infrared Technology XIV
Irving J. Spiro, Editor(s)

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