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Proceedings Paper

A 2048 X 64 Tapped Time-Delay-And Integration Charge-Coupled Image Device
Author(s): Bu on Tung Nguyen; Hsin-Fu Tseng; Gene P. Weckler
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Paper Abstract

A 2048 x 64 element time-delay-and integration (TDI) charge-coupled optical imaging device has been designed, fabri-cated, and tested. The device is a four-phase, buried-channel CCD structure and is designed for high-speed low-noise imaging (with low illumination in the visible and near-infrared spectral regions). The sensor array is divided into 16 sections of 128 x 64 pixels. Each section has two output structures, one at the top and one at the bottom of the sensor array. The device's serial-parallel-serial structure allows the charge in the parallel CCD shift register to be able to shift either up or down to the top or bottom serial CCD readout register. The readout register, in turn, transfers the charge in sequence to the output amplifier at a frequency of up to 8 Mhz. This high pixel rate combined with the parallel readout structure provides the imager with a maximum line rate of 62.5k lines per second. The high full-well capacity of each pixel (>.6 million electrons) and low noise floor of the output amplifier (<40 electrons rms) yield a dynamic range of more than 83 dB. Typical dark signal and charge-transfer-efficiency off the imager at 25°C are 2nA/cm and 0.99997, respectively. Subject terms: time-delay- and integration (TDI); charge-coupled device (CCD); visible; near-infrared; charge-transfer efficiency; full-well capacity; dynamic range.

Paper Details

Date Published: 7 December 1988
PDF: 5 pages
Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); doi: 10.1117/12.948290
Show Author Affiliations
Bu on Tung Nguyen, EG&G Reticon (United States)
Hsin-Fu Tseng, EG&G Reticon (United States)
Gene P. Weckler, EG&G Reticon (United States)

Published in SPIE Proceedings Vol. 0972:
Infrared Technology XIV
Irving J. Spiro, Editor(s)

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