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Proceedings Paper

Reduction Of Surface Leakage Current In Cd0.2Hg0.8Te Photodiode
Author(s): Y. Yoshida; Y. Hisa; T Takiguchi; Y Komine; K. Yasumura; K. Sato
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Paper Abstract

The surface leakage current of Cd0.2 Hg0.8Te photodiodes has been reduced by forming a wide gap epitaxial layer on the surface. CdHgTe double-layers consisting of p-CdxHgl_xTe (x>0.2)/p-Cd0.2Hg0,8Te were grown by liquid phase epitaxy on CdTe substrates. The hole carrier concen 3tration and m 1obility, obtained from van der Pauw Hall measurement at 77K, were 9x1015cm-3 and 6x102cm2V-15-, respectively. The p-n junctions were formed by removing the wide gap layer of 100/i m diameter to reach p-Cd0.2Hg0.8Te followed by the Indium diffusion in p-Cd0.2Hg0.8Te. The R0A products of the photodiode with and without the wide band gap layer were 9.1Q cm 2 (λ c=11μ m) and 2.00 cm2 (λ c=10μ m) at 77K, respectively, which confirm the effect of the wide gap layer on the surface leakage current reduction.

Paper Details

Date Published: 7 December 1988
PDF: 5 pages
Proc. SPIE 0972, Infrared Technology XIV, (7 December 1988); doi: 10.1117/12.948287
Show Author Affiliations
Y. Yoshida, Mitsubishi Electric Corporation (Japan)
Y. Hisa, Mitsubishi Electric Corporation (Japan)
T Takiguchi, Mitsubishi Electric Corporation (Japan)
Y Komine, Mitsubishi Electric Corporation (Japan)
K. Yasumura, Mitsubishi Electric Corp (Japan)
K. Sato, Mitsubishi Electric Corp (Japan)


Published in SPIE Proceedings Vol. 0972:
Infrared Technology XIV
Irving J. Spiro, Editor(s)

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