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Proceedings Paper

Millimeter-Wave Active Solid-State Devices
Author(s): Y. E. Ma
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Paper Abstract

The renewed interest in millimeter-wave systems in recent years has stimulated development effort of various solid-state devices. As a result, millimeter-wave IMPATT and Gunn device technologies are now well established for systems applications and the GaAs FET technology has been progressing rapidly extending its upper frequency range to beyond 70 GHz. This paper presents an overview of the current status of millimeter-wave active solid-state devices. The design, material, and fabrication of each device are briefly described and current performances of these devices are reported.

Paper Details

Date Published: 24 October 1985
PDF: 8 pages
Proc. SPIE 0544, Millimeter Wave Technology III, (24 October 1985); doi: 10.1117/12.948259
Show Author Affiliations
Y. E. Ma, Hughes Aircraft Company (United States)


Published in SPIE Proceedings Vol. 0544:
Millimeter Wave Technology III
James C. Wiltse, Editor(s)

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