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Proceedings Paper

GaAs IMPATT Sources
Author(s): D. Masse; M. G. Adlerstein; L. H. Holway Jr.
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Paper Abstract

Amplifiers and oscillators, using one or more gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained on devices developed in our laboratory. Our approaches to diode modeling and circuit optimization are outlined.

Paper Details

Date Published: 24 October 1985
PDF: 6 pages
Proc. SPIE 0544, Millimeter Wave Technology III, (24 October 1985); doi: 10.1117/12.948243
Show Author Affiliations
D. Masse, Raytheon Company Research Division (United States)
M. G. Adlerstein, Raytheon Company Research Division (United States)
L. H. Holway Jr., Raytheon Company Research Division (United States)

Published in SPIE Proceedings Vol. 0544:
Millimeter Wave Technology III
James C. Wiltse, Editor(s)

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