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Proceedings Paper

Current Status Of Silicon Materials Research For Photovoltaic Applications
Author(s): T. F. Ciszek
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Paper Abstract

The desire for high solar cell efficiencies has been a strong factor in determining the course of recent silicon crystal growth research efforts for photovoltaics. This review, therefore, focuses on single-crystal, dislocation-free ingot growth methods (Czochralski growth, float zoning, and cold crucible growth) and on sheet growth technologies, generally multicrystalline, that have achieved moderately high (>13.5%) laboratory-scale efficiencies. These include dendritic web growth, growth from capillary dies, edge-supported pulling, ribbon-against-drop growth, and a recent technique termed crucible-free horizontal growth. Silicon ribbon crystals provide a favorable geometry and require no wafering, but they contain defects that limit solar cell performance. Growth processes, their current status, and cell efficiencies are discussed. Silicon material process steps before and after crystal growth are described, and the advantages of silicon are presented.

Paper Details

Date Published: 9 May 1985
PDF: 10 pages
Proc. SPIE 0543, Photovoltaics, (9 May 1985); doi: 10.1117/12.948189
Show Author Affiliations
T. F. Ciszek, Solar Energy Research Institute (United States)

Published in SPIE Proceedings Vol. 0543:
Satyen K. Deb, Editor(s)

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