Share Email Print
cover

Proceedings Paper

Growth And Characterization Of Gallium Arsenide On Sapphire By Molecular Beam Epitaxy
Author(s): D. Biswas; J-I Chyi; H Morkoc; S. DiVita; G. Kordas
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Gallium Arsenide thin films have been successfully grown onto (1102) sapphire substrates by Molecular Beam Epitaxy methods using a graded growth procedure. The initial layers of GaAs were grown at lower growth rates and at lower substrate temperatures, followed by a thicker GaAs layer grown at usual growth rate of 1 pm/h. The films grown at temperature of 585 °C show good surface morphology. Silicon doped GaAs films exhibit n type conductivity and show low temperature photoluminescence band with peak energy at 1.502 eV and line width of about 42 meV.

Paper Details

Date Published: 16 January 1989
PDF: 6 pages
Proc. SPIE 0970, Properties and Characteristics of Optical Glass, (16 January 1989); doi: 10.1117/12.948181
Show Author Affiliations
D. Biswas, University of Illinois at Urbana-Champaign (United States)
J-I Chyi, University of Illinois at Urbana-Champaign (United States)
H Morkoc, University of Illinois at Urbana-Champaign (United States)
S. DiVita, U.S. Army Communications (United States)
G. Kordas, University of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 0970:
Properties and Characteristics of Optical Glass
Alexander J. Marker, Editor(s)

© SPIE. Terms of Use
Back to Top