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Proceedings Paper

Growth Of Diamond-Like Films On Ni Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition
Author(s): R. A. Rudder; J. B. Posthill; G. C. Hudson; M. J. Mantini; R. J. Markunas
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Paper Abstract

Remote plasma enhanced chemical vapor deposition has been used to investigate the nucleation and growth of diamond and diamond-like films on Ni surfaces. The primary results center around hydrogen dilution experiments. Hydrogen dilution when using the polycrystalline Ni substrates tends to reduce the growth rate and increase the electrical resistivity of the films (-107 Ω-cm), it is found that at even higher hydrogen dilutions (greater than 98% H2) the films become semicontinuous with sparse and sometimes no nucleation occurring. These films, like the ones grown at lower hydrogen dilution, do not show a 1332 cm-1 diamond Raman line but show graphitic and disordered carbon features. An attempt to grow heteroepitaxial diamond on Ni(111) surfaces under conditions of high hydrogen dilution (100:1) produced a sample with oriented hillocks which are heteroepitaxially in registration with the substrate. Raman analysis showed lines characteristic of graphite and disordered carbon with an additional line at 1398 cm-1. Transmission electron microscopy produced a diffraction pattern with the lattice spacing and symmetry of epitaxial graphite with some faint polycrystalline rings.

Paper Details

Date Published: 17 January 1989
PDF: 7 pages
Proc. SPIE 0969, Diamond Optics, (17 January 1989); doi: 10.1117/12.948143
Show Author Affiliations
R. A. Rudder, Research Triangle Institute (United States)
J. B. Posthill, Research Triangle Institute (United States)
G. C. Hudson, Research Triangle Institute (United States)
M. J. Mantini, Research Triangle Institute (United States)
R. J. Markunas, Research Triangle Institute (United States)


Published in SPIE Proceedings Vol. 0969:
Diamond Optics
Albert Feldman; Sandor Holly, Editor(s)

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