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Proceedings Paper

A Novel, High Contrast Positive Photoresist System
Author(s): Richard E. Hopla; Andrew J. Blakeney; Paulette D. Wright
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Paper Abstract

For the past several years the trend in VLSI technology has been toward attaining higher and higher pattern densities, which requires the ability to print him and smaller geometries over steps. Concurrently, the increasing use of step and repeat technology has allowed placing less emphasis on throughput and more on process control. It has been predicted that the ability to achieve contrasts during processing of greater than 5 would allow wet processing to give more nearly vertical wall angles and minimize the variation in linewidth over steps. This paper will discuss one such system having a contrast value greater than 10, demonstrating the strengths and weakness of such a material. This system has shown the capability of patterning less than 0.5μm features on planar substrates at full film thickness and substantial exposure latitude, with reduced linewidth variation over steps as compared to more conventional materials. The impact of various processing parameters will be discussed, including agitation and temperature. The ability of this system to generate a lift-off profile in one step will also be examined.

Paper Details

Date Published: 18 April 1985
PDF: 11 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947847
Show Author Affiliations
Richard E. Hopla, Allied Chemical (United States)
Andrew J. Blakeney, Allied Chemical (United States)
Paulette D. Wright, Allied Chemical (United States)

Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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