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Proceedings Paper

Plasma Performance Of Positive Resist Systems Using Spin-On Antireflective Coatings In Cl[sub]2[/sub]/Sf[sub]6[/sub], Chf[sub]3[/sub]/O[sub]2[/sub] And Cc1[sub]4[/sub] Plasmas
Author(s): Geoffrey A. Hungerford; William J.O. Boyle
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Paper Abstract

Linewidth control and resolution have become increasingly more difficult for optical lithography in the one micron region because of reflective substrates and severe topography. Recently, much attention has been given to spin-on Antiretlective Coatings (ARC) as an easily implemented solution to standing waves and scattered reflections. This leads to improved linewidth control and better resolution for the same aligner and resist system. This paper investigates ARC undercutting and its effect on the final etched image for popular anisotropic plasmas as used to etch polysilicon gates, silox contact holes, and aluminium interconnections. Brewer ARC-PN4, ARC-PN2, and Waycoat 204 positive photoresist were used and imaged using a THE 800-SLR 10X stepper. It was found that final etched features were insensitive to spin-on ARC baking and developing conditions making this a useful technique for production in the one micron region.

Paper Details

Date Published: 18 April 1985
PDF: 8 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947838
Show Author Affiliations
Geoffrey A. Hungerford, GEC Research Laboratories (England)
William J.O. Boyle, GEC Research Laboratories (England)

Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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