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Proceedings Paper

Azide-Phenolic Resin Resists Sensitive To Visible Light
Author(s): Saburo Nonogaki; Michiaki Hashimoto; Takao Iwayanagi; Hiroshi Shiraishi
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Paper Abstract

Two kinds of negative photoresists, MRL(N) and MRG have been obtained by sensitizing poly-vinylphenol with aromatic azides synthesized by condensing isophorone with p-azidobenz-aldehyde and p-azidocinnamaldehyde. The sensitivity of MRG to g line (436 nm), expressed by the dose necessary for 50 % film thickness to remain on the substrate after development (D1°) is 55 mJ/cm2. MRL(N) is less sensitive to g line than MRG, however, its ID" value to i line (365 nm) is 13 mJ/cm2. Both resists do not swell in aqueous alkaline developer, and conse-quently have high resolution capability. The quantum efficiency of photodecomposition of azide has been determined. The values ranged from 0.10 to 0.24. The photoinsolubilization of resist is considered to be mainly due to the increase in molecular weight of polyvinylphenol by the recombination of polymer radicals with each other.

Paper Details

Date Published: 18 April 1985
PDF: 5 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947834
Show Author Affiliations
Saburo Nonogaki, Hitachi, Ltd. (Japan)
Michiaki Hashimoto, Hitachi, Ltd. (Japan)
Takao Iwayanagi, Hitachi, Ltd. (Japan)
Hiroshi Shiraishi, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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