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Proceedings Paper

Inorganic Resists Based On Photo-Doped As-S Films
Author(s): A. P. Firth; P. J.S. Ewen; A. E. Owen; C. M. Huntley
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Paper Abstract

In recent years there has been considerable interest in inorganic resist systems based on the photo-doping of amorphous chalcogenide films, the majority of the research being devoted to Ge-Se films. This paper presents a detailed investigation of inorganic resists based on the photo-doping of Ag into As-S films. It is shown that high resolution patterns can be produced in such resists using holography or optical lithography and that they are compatible with wet-chemical or plasma etching. Structural studies using Raman spectro-scopy indicate that for best resolution the composition of the As-S film should be close to AS33S67 since on photo-doping it will yield a single-phase homogeneous material. A possible mechanism for the photo-doping process is described based on a tarnishing-type photo-chemical reaction. It is shown that the actinic radiation initiating the photo-dissolution effect is absorbed primarily in the photo-doped layer, close to the interface with the undoped As-S region.

Paper Details

Date Published: 18 April 1985
PDF: 6 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947829
Show Author Affiliations
A. P. Firth, University of Edinburgh (U.K.)
P. J.S. Ewen, University of Edinburgh (U.K.)
A. E. Owen, University of Edinburgh (U.K.)
C. M. Huntley, University of Edinburgh (U.K.)


Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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