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Proceedings Paper

Effect Of Photoresist Composition On The Origin Of The Interfacial Layer In The Bilevel System.
Author(s): J. Wijdenes; M. J.H.J. Geomini
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Paper Abstract

Although many attempts have been made to prevent the formation of the interfacial layer between the toplayer resist and the bottom layer resist PMMA, an interfacial layer always seems to be more or less present. After an extra treatment it is sometimes possible to re-move this thin layer. It would be an advantage if such an extra process step could be avoided by means of applying a toplayer photoresist which does not cause the formation of an interfacial layer. We therefore tried to gain a basic understanding of the parameters which have effect on the origin of the interfacial layer. From the investigation of the effects of the resin composition and its molecular weight (distribution), the solid content, the solvent composition and the prebake temperature on the interfacial layer formation it appeared that all these parameters are concerned in the origin of the interfacial layer. Prebake temperatures should be as low as possible, 450°C for novolak based resists (which results in bad resolution) and 480°C for a polyhydroxy-styrene based positive resist. The low and high molecular weight fraction of novolak are causing thicker interfacial layers than the medium molecular weight fraction. If cyclohexanone or ethylcellosolve were used as solvents and polyhydroxystyrene as the resin a positive near UV photoresist could be composed which can be used as the toplayer resist for the bilevel deep UV system in the capped mode with a negligible interfacial layer.

Paper Details

Date Published: 18 April 1985
PDF: 6 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947821
Show Author Affiliations
J. Wijdenes, Philips Research Laboratories (Netherlands)
M. J.H.J. Geomini, Philips Research Laboratories (Netherlands)

Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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