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Proceedings Paper

Poly (Methylstyrene - Dimethylsiloxane) Block Copolymers As Bilevel Resists
Author(s): M. A. Hartney; A. E. Novembre
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Paper Abstract

Multi-level resist systems are rapidly becoming essential in the drive towards submicron lithography. Such systems offer many inherent advantages over single level schemes, such as planarization of underlying substrate, higher resolution and formation of high aspect ratio patterns. Other advantages, particular to specific exposure technologies, can also be found. These include minimization of backscatter and proximity effects for electron beam lithography or reduction of standing wave effects and depth of focus problems for photolithography.

Paper Details

Date Published: 18 April 1985
PDF: 7 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947820
Show Author Affiliations
M. A. Hartney, AT&T Bell Laboratories (United States)
A. E. Novembre, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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