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Proceedings Paper

High Temperature Positive Photoresist For Use On Reflective Topography And Sputter Applications
Author(s): M. Toukhy; S. Tadros; C. Guglielmo
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Paper Abstract

A phenolic resist system was formulated with a selected anti-reflective dye tuned for use with stepper exposure equipment in the 400-436 nm region. High exposure latitude and better than 1.25 micrometer resolution were demonstrated over highly reflective aluminized topography. Excellent 200oC. resist image stability was enhanced by deep UV treatment to endure prolonged heating at 400°C. It is felt that this resist is a good candidate for use in high temperature processes such as sputtering applications.

Paper Details

Date Published: 18 April 1985
PDF: 9 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947818
Show Author Affiliations
M. Toukhy, Philip A. Hunt Chemical Corporation (United States)
S. Tadros, Philip A. Hunt Chemical Corporation (United States)
C. Guglielmo, Philip A. Hunt Chemical Corporation (United States)


Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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