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Proceedings Paper

Silicon-Containing Resists For Bi-Layer Resist Systems
Author(s): Y. Ohnishi; M. Suzuki; K. Saigo; Y. Saotome; H. Gokan
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Paper Abstract

Several kinds of silicon-containing resist materials for bi-layer resist systems devel-oped in our' Laboratories are reported. For negative working resists, poly(trimethylsilylstyrene-co-chloromethylstyrene) ( P(SiSt-CMS) ) and a mixture of poly(triallylphenylsilane) with bisazide ( TAS ) have been developed. P(SiSt-CMS) was designed for EB or deep UV exposure. TAS suits to use in near UV lithographic tools. For positive working resists, SIPR (a partly trimethylsilyl-methylated resorcinol-formaldehyde resin mixed with naphthoquinonediazide) was developed. Syntheses, lithographic data and applications to bi-layer systems of these resists are given.

Paper Details

Date Published: 18 April 1985
PDF: 8 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947816
Show Author Affiliations
Y. Ohnishi, Fundamantal Research Laboratories (Japan)
M. Suzuki, Fundamantal Research Laboratories (Japan)
K. Saigo, Fundamantal Research Laboratories (Japan)
Y. Saotome, Fundamantal Research Laboratories (Japan)
H. Gokan, NEC Corporation (Japan)


Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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