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Proceedings Paper

Structure And Composition Dependence Of The Anisotropy Of The Wet Chemical Etching Of Germanium-Selenium Films
Author(s): E. ONG; K. L. Tai; R. G. Vadimsky; C. T. Kemmerer; P. M. Bridenbaugh
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Paper Abstract

A model for image formation in the Ag2Se/GexSe1-x resist systems had been proposed by Tai et al.1 The first step of the process consists of forming a thin latent image of photodoped Ag in the top layer of the GexSel-x film. This Ag doped layer then serves as a mask for the anisotropic wet chemical etching of the undoped GexSel-x structure with a bicomponent etchant. Anisotropic chemical etching results from an unusual, interlocked, phase-separated columnar structure of the GexSel-x film. The formation of such phase-separated columnar structures depends on the composition of the Germanium-Selenium film. We examine here the dependence of film microstructure on film composition and describe the relationship bewtween etching characteristics and the concentration ratios of a bicomponent developer.

Paper Details

Date Published: 18 April 1985
PDF: 4 pages
Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); doi: 10.1117/12.947814
Show Author Affiliations
E. ONG, AT&T Bell Laboratories (United States)
K. L. Tai, AT&T Bell Laboratories (United States)
R. G. Vadimsky, AT&T Bell Laboratories (United States)
C. T. Kemmerer, AT&T Bell Laboratories (United States)
P. M. Bridenbaugh, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0539:
Advances in Resist Technology and Processing II
Larry F. Thompson, Editor(s)

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