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Lithography For A Submicron CMOS Process| Format | Member Price | Non-Member Price |
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Paper Abstract
The principal requirements for a Submicron CMOS process are the ability to generate submicron geometries, and the ability to register the several masking layers closely enough to take full advantage of the benefits of those geometries. This paper discusses the suitability of a GCA 4800 Wafer stepper to fulfill those requirements.
Paper Details
Date Published: 23 July 1985
PDF: 5 pages
Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); doi: 10.1117/12.947746
Published in SPIE Proceedings Vol. 0538:
Optical Microlithography IV
Harry L. Stover, Editor(s)
PDF: 5 pages
Proc. SPIE 0538, Optical Microlithography IV, (23 July 1985); doi: 10.1117/12.947746
Show Author Affiliations
P. Poppert, GTE Laboratories (United States)
S. Novak, GTE Laboratories (United States)
S. Novak, GTE Laboratories (United States)
P. Wright, GTE Laboratories (United States)
Published in SPIE Proceedings Vol. 0538:
Optical Microlithography IV
Harry L. Stover, Editor(s)
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