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Proceedings Paper

High Reliability Planar InGaAs/InP Photodiodes Made With High Yield by Atmospheric Pressure MOVPE
Author(s): M. J. Robertson; C. P. Skrimshire; S. Ritchie; S. K. Sargood; A. W. Nelson; R. H. Walling; L. Davis; R. R. Sutherland
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Paper Abstract

A high-yield process for making planar InGaAs/InP photodiodes based on metal-organic vapour phase epitaxy (MOVPE) growth at atmospheric pressure has been developed. The process results in very good uniformity and yield and gives high-performance devices of excellent reliability, with a random failure rate of less than 0.3 FITs at 20°C. This reliability performance is easily able to meet the stringent requirements for detectors in submarine systems.

Paper Details

Date Published: 21 September 1988
PDF: 3 pages
Proc. SPIE 0949, Fibre Optics '88, (21 September 1988); doi: 10.1117/12.947520
Show Author Affiliations
M. J. Robertson, British Telecom Research Laboratories (UK)
C. P. Skrimshire, British Telecom Research Laboratories (UK)
S. Ritchie, British Telecom Research Laboratories (UK)
S. K. Sargood, British Telecom Research Laboratories (UK)
A. W. Nelson, British Telecom Research Laboratories (UK)
R. H. Walling, British Telecom Research Laboratories (UK)
L. Davis, British Telecom Research Laboratories (UK)
R. R. Sutherland, British Telecom Research Laboratories (UK)


Published in SPIE Proceedings Vol. 0949:
Fibre Optics '88
Lionel R. Baker, Editor(s)

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