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Proceedings Paper

X-Ray Mask Technology
Author(s): A. R. Shimkunas; S. A. Harrell
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Paper Abstract

The technology for manufacturing boron nitride x-ray masks used with a palladium anode x-ray source is described. There are important relationships between LPCVD boron nitride process parameters and critical membrane properties. The LPCVD process variables affect the alignment wavelength transmittance, membrane tension, and tension uniformity, the latter properties having significant influence on mask flatness. Subtractive patterning of the gold x-ray absorber layer is easily accomplished using tantalum layers as etch stops. Additive patterning by electroplating is a promising technique for producing x-ray masks for submicron imaging.

Paper Details

Date Published: 20 June 1985
PDF: 7 pages
Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947503
Show Author Affiliations
A. R. Shimkunas, Micronix Corporation (United States)
S. A. Harrell, Micronix Corporation (United States)


Published in SPIE Proceedings Vol. 0537:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV
Phillip D. Blais, Editor(s)

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