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Proceedings Paper

Submicron Pattern Fabrication By Focused Ion Beams
Author(s): T. Kato; H. Morimoto; H. Nakata
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Paper Abstract

In order to develop new generation VLSI devices ( 4 - 16 M Dynamic RAMS ), a submicron fabrication technology is strongly desired. With conventional optical lithography methods, there is a inherent limit of 0.5 - 0.7 μm linewidths. Focused Ion Beam ( FIB ) lithography is expected to emerge in the future because of its many advantages for submicron lithography. Both a submicron Si MOSFET with a high switching speed and a GaAs MESFET with a 0.25 μm gate have been fabricated using FIB lithography technology.

Paper Details

Date Published: 20 June 1985
PDF: 10 pages
Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947501
Show Author Affiliations
T. Kato, Mitsubishi Electric Corporation (Japan)
H. Morimoto, Mitsubishi Electric Corporation (Japan)
H. Nakata, Mitsubishi Electric Corporation (Japan)


Published in SPIE Proceedings Vol. 0537:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV
Phillip D. Blais, Editor(s)

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