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Proceedings Paper

Current Status Of Ion Projection Lithography
Author(s): G. Stengl; H. Loschner; W. Maurer; P. Wolf
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Paper Abstract

Ion beam lithography is developed in three directions: Focused (FIBL), Masked (MIBL) and Ion Projection Lithography (IPL). IPL uses ions as information carrier in a demagnifying step-and-repeat exposure system. With an Ion Projection Lithography Machine (IPLM) a geometrical resolution < 0.25 μm can be obtained combined with a very high depth of focus:more than 100 μm. The high power densities possible with IPL permit not only pattern transfer in conventional organic resists but extend lithography to new processes using resistless ion beam modification techniques of materials. Experimental results obtained with a laboratory type Ion Projection Lithography Machine IPLM-01 are presented.

Paper Details

Date Published: 20 June 1985
PDF: 8 pages
Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947494
Show Author Affiliations
G. Stengl, I M S - Ion Microfabrication Systems (Austria)
H. Loschner, I M S - Ion Microfabrication Systems (Austria)
W. Maurer, I M S - Ion Microfabrication Systems (Austria)
P. Wolf, I M S - Ion Microfabrication Systems (Austria)


Published in SPIE Proceedings Vol. 0537:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV
Phillip D. Blais, Editor(s)

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