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Proceedings Paper

Repair Of Photomasks With Focussed Ion Beams
Author(s): B. W. Ward; D. C. Shaver; M. L. Ward
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Paper Abstract

The development of high-brightness liquid metal ion sources [1] has made it possible to produce focussed ion beams with submicrometer dimensions and moderate current density (about 1 A/cm2). Several classes of applications for focussed ion beam systems have been proposed including direct implantation, lithography, and micromachining. Though focussed ion beams have some unique and attractive properties, they are unlikely to replace mainstream lithography and broad-beam implantation technologies. For instance, for applications such as high-dose source-drain implantations, the writing rate would be limited to only a few thousand pixels per second, resulting in excessive writing times. On the other hand, for certain niche applications a focussed ion beam may be the method of choice. As an example, a custom wafer requiring threshold adjustment implants (1013 cm-2 and 1% coverage) could be processed in less than an hour and would require no mask generation or resist processing and exposure steps.

Paper Details

Date Published: 20 June 1985
PDF: 7 pages
Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947491
Show Author Affiliations
B. W. Ward, Micrion Corporation (United States)
D. C. Shaver, Micrion Corporation (United States)
M. L. Ward, Micrion Corporation (United States)


Published in SPIE Proceedings Vol. 0537:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV
Phillip D. Blais, Editor(s)

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