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Proceedings Paper

The Time Has Come For X-Ray Lithography
Author(s): Richard L. Ruddell
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Paper Abstract

The era is fast approaching when light optics must utilize all of its options; higher numerical aperture lens, shorter wavelength and partially coherent illumination along with process aids such as multilevel resist processes, to name a few. The relative production process difficulty of light optics and x-ray become equivalent in the 1.25μm regime. With x-ray relieving the imposed limitations of diffraction coupled with recent advances in x-ray sources, masks, alignment techniques and photoresists, it is now time to begin serious x-ray process development.

Paper Details

Date Published: 20 June 1985
PDF: 7 pages
Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947484
Show Author Affiliations
Richard L. Ruddell, Ruddell & Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 0537:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV
Phillip D. Blais, Editor(s)

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