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Proceedings Paper

Development of a Nanometric E-Beam Lithography System (JBX-5DII)
Author(s): M.Hassel Shearer; H. Takemura; M. Isobe; N. Goto; K. Tanaka; S. Miyauchi
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Paper Abstract

The production of VHSIC and microwave devices has shown that submicron lithography by E-beam, Optical, or X-ray systems is rapidly becoming feasible. There is, however, a developing demand for a nanolithography tool for producing Josephson, GaAs, optoelectronic devices and for investigating the physics of scaling of semiconductor devices.

Paper Details

Date Published: 20 June 1985
PDF: 5 pages
Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947479
Show Author Affiliations
M.Hassel Shearer, Jeol U.S.A.Inc. (United States)
H. Takemura, Jeol U.S.A.Inc. (United States)
M. Isobe, Jeol Ltd. (Japan)
N. Goto, Jeol Ltd. (Japan)
K. Tanaka, Jeol Ltd. (Japan)
S. Miyauchi, Jeol Ltd. (Japan)


Published in SPIE Proceedings Vol. 0537:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV
Phillip D. Blais, Editor(s)

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